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BC847BPN Vacuum Triode Amplifier Bipolar (BJT) Transistor Array NPN

Categories Vacuum Triode Amplifier
Model Number: BC847BPN
Place of Origin: Original
Brand Name: Original Manufacturer
Certification: RoHS
MOQ: 1
Price: Negotiation
Packaging Details: Original Packing
Delivery Time: In stock
Payment Terms: TT, Paypal, Western Union And So On
Supply Ability: 80000
Part Status: Active
Transistor Type: NPN, PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 300mW
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    BC847BPN Vacuum Triode Amplifier Bipolar (BJT) Transistor Array NPN


    BC847BPN Vacuum Triode Amplifier Bipolar (BJT) Transistor Array NPN, PNP 45V 100mA 100MHz 300mW Surface Mount 6-TSSOP


    Part StatusActive
    Transistor TypeNPN, PNP
    Current - Collector (Ic) (Max)100mA
    Voltage - Collector Emitter Breakdown (Max)45V
    Vce Saturation (Max) @ Ib, Ic300mV @ 5mA, 100mA
    Current - Collector Cutoff (Max)15nA (ICBO)
    DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 2mA, 5V
    Power - Max300mW
    Frequency - Transition100MHz
    Operating Temperature150°C (TJ)
    Mounting TypeSurface Mount
    Package / Case6-TSSOP, SC-88, SOT-363
    Supplier Device Package6-TSSOP, SC-88

    1.

    Product profile


    1.1 General description

    NPN/PNP general-purpose transistor pair in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package.


    1.2 Features

    ■ Low collector capacitance

    ■ Low collector-emitter saturation voltage

    ■ Closely matched current gain

    ■ Reduces number of components and board space

    ■ No mutual interference between the transistors


    1.3 Applications

    ■ General-purpose switching and amplification


    1.4 Quick reference data


    Table 1.Quick reference data
    SymbolParameterConditionsMinTypMaxUnit
    Per transistor; for the PNP transistor with negative polarity
    VCEOcollector-emitter voltageopen base-- 45V
    ICcollector current-- 100mA
    hFEDC current gainVCE = 5 V; IC = 2 mA200- 450

    1.

    Ordering information


    Table 3. Ordering information

    Type numberPackage
    NameDescriptionVersion

    BC847BPN SC-88 plastic surface-mounted package; 6 leads SOT363


    Table 4. Marking codes

    BC847BPN 13*

    [1] * = -: made in Hong Kong

    * = p: made in Hong Kong

    * = t: made in Malaysia

    * = W: made in China

    1.Limiting values

    Table 5. Limiting values


    In accordance with the Absolute Maximum Rating System (IEC 60134).


    Per transistor; for the PNP transistor with negative polarity


    VCBOcollector-base voltageopen emitter- 50V
    VCEOcollector-emitter voltageopen base- 45V
    VEBOemitter-base voltageopen collector- 5V
    ICcollector current- 100mA
    ICMpeak collector currentsingle pulse; tp £ 1 ms- 200mA
    IBMpeak base currentsingle pulse; tp £ 1 ms- 200mA
    Ptot total power dissipation Tamb £ 25 °C[1] -220mW
    [2] -250mW
    Per device
    Ptot total power dissipation Tamb £ 25 °C[1] -300mW
    [2] -400mW
    Tjjunction temperature-150°C
    Tambambient temperature-65+150°C
    Tstgstorage temperature-65+150°C

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