high power 4 channel amp

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

...High Power MOSFET is an advanced semiconductor device designed to meet the demanding requirements of modern electronic applications. As a high power n channel MOSFET, this product is engineered to deliver exceptional performance in a variety of high-stress environments, making it an ideal choice for applications such as solar inverters, high-voltage DC/DC converters, motor drivers, UPS power supplies, switching power

Brand Name:TX TELSIG

Model Number:TX-NZ150W

Place of Origin:Shenzhen,China

High Power 11 Channel 150W 5G Jammer Signal Jammers For Jamming Cell Phone GSM 2G 3G 4G 5G WiFi GPS VHF UHF Lojack 1.Product Introduction It adopts the new massive MIMO antenna 14 dBi high gain and strong power push RF amplifier inside, to ensure its ...

Brand Name:P-AMF

Model Number:VIP-4-8000

Place of Origin:china

..., allowing for the simultaneous amplification of multiple audio sources or speakers. High Power Output: Delivers substantial wattage per channel, providing the necessary power to drive professional-grade speakers without distortion, even at high volumes.

Brand Name:MIROTE

Model Number:HY632

Place of Origin:CHINA

... pure copper wire, 30 and 87 pins use copper material too, then the relay can be used for 5-8 years. If add one more braided wire ,the power will be larger, so as the

Brand Name:onsemi

Model Number:NTK3134NT5G

Place of Origin:original

...Power Electronics SOT-723 High Power N-Channel Transistor Applications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20 V Current - Continuous Drain (Id) @ 25°C 750mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V Rds On (Max) @ Id, Vgs 350mOhm @ 890mA, 4.5V Vgs(th) (Max) @ Id 1.2V @ 250µA Vgs (Max) ±6V Input Capacitance (Ciss) (Max) @ Vds 120 pF @ 16 V FET Feature - Power...

Brand Name:DOLSI

Model Number:KT SERIES

Place of Origin:CHINA

... KT-800 KT-1000 KT-1300 8Ω stereo output power 4x600W 4x800W 4x1000W 4x1300W 4Ω stereo output power 4x890W 4x1100W 4x1500W 4x1820W S/N Ratio 105dB 105dB 103dB 102dB Slew rate 17V/uS 25V/uS 28V/uS 32V/uS ...

Place of Origin:CN

Brand Name:Original Factory

Model Number:2SC0535T2G0C-33

2SC0535T2G0C-33 Automotive IGBT Modules Usual High-Power Dual-Channel SCALE™-2 IGBT Driver Module [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% Low Price Guaranteed...

Place of Origin:Shenzhen

Brand Name:NMD

Model Number:NMD-2835

..., long life span. High-pressure injection technology, beautiful and unique appearance, good heat dissipation. Protect level:IP65 Input voltage: DC12V, ...

Brand Name:Oky Newstar

Model Number:oky2110

Place of Origin:Guangdong China (Mainland)

High Power 2 Channel 3W Board For Arduino / PAM8403 Audio Super Mini Digital Red Amplifier module Description: Operating voltage: 3.6v-5.5V Output power: 3W + 3W (4 ohms) SNR: 90dB Efficiency: > 90% Material: Circuit board Size: 24 * 15.5 mm positioning ...

Brand Name:CreatAll

Model Number:CA-12000

Place of Origin:Guangdong, China

... distortion: 0.01% Amplification: 25 times Supply voltage: The main voltage DC double 50-100V (to add their own separate power supply rectifier board). Protection circuit AC single 12-18V (to independent power supply, can not be

Brand Name:CJ

Model Number:CJ2310 S10

Place of Origin:CHINA

...Channel MOSFET Plastic-Encapsulate MOSFETS DESCRIPTION The CJ2310 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltage as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. FEATURE  High power...

Brand Name:HC

Model Number:HC-VIP 105

Place of Origin:China

Technical Parameters A:Jamming Range: Radius of 100~500 meters (-75dBm, depending on the distance of base station in an open field) B:Transmission Power: Integrated equipment ≥ 800W, 50~140W per channel C:Mobile Signal Types: Handset of all systems: GSM(...

Brand Name:Infineon Technologies

Model Number:IPP65R110CFDA

Place of Origin:United States

IPP65R110CFDA N-Channel 650 V 31.2A (Tc) 277.8W (Tc) Through Hole PG-TO220-3 Features:IPP65R110CFDA Category Single FETs, MOSFETs Mfr Infineon Technologies Series Automotive, AEC-Q101, CoolMOS Product Status Active FET Type N-Channel Technology MOSFET (...

Brand Name:senring

Model Number:EH3899-02

Place of Origin:CHINA

1000M/100M Base-T Ethernet Slip Ring 2 Channels Gigabit Ethernet Description of EH3899-02 Ethernet Slip Ring Available for custom, run 100/1000M Ethernet signal Insertion loss, return loss and crosstalk are three very important parameters for an Ethernet ...

Brand Name:WolvesTeam

Place of Origin:China

Product Description: Application Fields High quality jammers widely use in Military Units, Prison, Police, Bomb Disposal and Security Services. Protect military and VIP team from the road-side remote improvised explosive device (RCIED) attack detonated by ...

Place of Origin:original

Brand Name:original

Model Number:IRFP9240PBF

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Brand Name:Infineon Technologies

Model Number:SPW20N60C3

Place of Origin:China

Infineon MOSFET N-Ch 650V 20.7A TO247-3 CoolMOS C3,600V CoolMOS™ C3 is Infineon's third series of CoolMOS™ Replacement for 600V CoolMOS™ C3 is CoolMOS™ P7 600V CoolMOS™ C3 is Infineon's third series of CoolMOS™ with market entry in 2001. C3 is the "working...