n p channel trench mosfet

Brand Name:N-X-P Semiconductors

Model Number:PMCXB900UE

Place of Origin:USA

... Polarity: N-Channel, P-Channel Number of Channels: 2 Channel Vds - Drain-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 600 mA, 500 mA Rds On - ...

Brand Name:original

Model Number:NX7002AK,215

...Channel Trench MOSFET 60V 190mA Single SMD/SMT Products Description: The NX7002AK is a N-channel enhancement mode Field-Effect Transistor (FET) in a Surface Mounted Device (SMD) plastic package using Trench MOSFET technology. Very Fast Switching ESD Protection Upto 1.5kV MOSFET N-CH 60V 190MA TO236AB Trans MOSFET...

Brand Name:Original Factory

Model Number:PMDXB600UNE

Place of Origin:CN

... ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Specification Of PMDXB600UNE Product Status Active FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss)

Brand Name:NEXPERIA

Model Number:PMPB11EN

Place of Origin:NEXPERIA

...: Details Technology: Si Mounting Style: SMD/SMT Package / Case: DFN-2020-6 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 30 V Id - Continuous Drain Current: 13 A Rds On - Drain-Source Resistance: ...

Brand Name:onsemi

Model Number:NTJS3157NT1G

Place of Origin:original

... –20 V, –0.83 A, 0.5 Ω –20 V, –0.83 A, 0.5 ΩSingle P-Channel (–1.5 V) Specified PowerTrench® MOSFET –20 V, –0.83 A, 0.5 Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20 V Current - Continuous Drain (Id) @ 25°C 3.2A (Ta)

Place of Origin:China

Brand Name:ONSEMI

Model Number:NVJD4152P

High Power MOSFET NVJD4152P Dual P−Channel Trench Small Signal ESD Protected MOSFET 20V, 0.88A, 260mΩ [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over 10 ...

Brand Name:ON Semiconductor

Model Number:FDMC510P

Place of Origin:CHINA

...Channel 20V POWER MOSFET 2.3W 41W Surface Mount 8-MLP General Description This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been optimized for RDS(ON), switching performance and ruggedness. FET Type P-Channel Technology MOSFET...

Brand Name:Anterwell

Model Number:SI4435DY

Place of Origin:original factory

SI4435DY 30V P-Channel PowerTrench MOSFET General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave ...

Brand Name:FAIRCHILD

Model Number:FDP085N10A

Place of Origin:America

... Technology for Extremely Low RDS(on) • High Power and Current Handling Capability • RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been especially tailored to

Place of Origin:ShenZhen China

Brand Name:Hua Xuan Yang

Model Number:10G03S

...Channel Enhancement Mode MOSFET Description The 10G03S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications General Features N-Channel VDS = 30V,ID =10A RDS(ON) < 16m Ω@ VGS=10V P-Channel...

Brand Name:STMicroelectronics

Model Number:STP15810

Place of Origin:Shenzhen, China

... charge for faster and more efficient switching. Features : 100% avalanche tested Ultra low on-resistance Distinctive Characteristics : Part No: STP15810 Description: N Channel Power MOSFET Rad Hardened: No

Brand Name:CANYI

Model Number:AP70N03NF

Place of Origin:Guangdong, China

... for use as a Battery protection or in other Switching application. General Features VDS = 30V ID =70A RDS(ON) < 5.5mΩ VGS=10V N-Channel Advanced Power MOSFET DFN5*6-8L N

Brand Name:JUYI

Model Number:JY16M

Place of Origin:China

JY16M N Channel 600V TO220F-3 Package Enhancement Mode Power MOSFET for BLDC motor driver GENERAL DESCRIPTION The JY16M utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive ...

Brand Name:JUYI

Model Number:JY12M

Place of Origin:China

General Descriptions: The JY12M is the N and P Channel logic enhancement mode power field transistors are produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These ...

Brand Name:Alpha & Omega Semiconductor Inc.

Model Number:AO4407A

AO4407A P-Channel Enhancement Mode Field Effect Transistor The AO4407A uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM ...

Brand Name:JUYI

Model Number:JY12M

Place of Origin:China

JY12M N and P Channel 30V MOSFET for BLDC motor driver GENERAL DESCRIPTION The JY12M is the N and P Channel logic enhancement mode power field transistors are produced using high cell density DMOS trench technology. This high density process is especially ...

Place of Origin:ShenZhen China

Brand Name:OTOMO

Model Number:HXY9926A

HXY9926A 20V Dual N-Channel MOSFET General Description The HXY9926A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is suitable...

Brand Name:FORTUNE

Model Number:FS8205A

Place of Origin:TAIWAN

FS8205A Dual N-Channel Enhancement-Mode MOSFET (20V, 6A) 1.Description This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for power management applications with a wide range of gate drive voltage...

Brand Name:AlphaandOmega Semiconductor

Model Number:AON7534

Place of Origin:China

AON7534 30V N-Channel MOSFET 10.5mandOmega; Rds(on) 60A Continuous DFN5x6-8L -55anddeg;C to +175anddeg;C AEC-Q101 andnbsp; General Description andbull; Trench Power MOSFET technology andbull; Very Low RDS(on) at 4.5VGS andbull; Low Gate Charge andbull; ...

Brand Name:CJ

Model Number:CJ2310 S10

Place of Origin:CHINA

CJ2310 S10 NPN PNP Transistors N-Channel MOSFET Plastic-Encapsulate MOSFETS DESCRIPTION The CJ2310 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltage as low as 2.5V. This device is suitable for ...