n type enhancement mosfet

Brand Name:onsemi

Model Number:FDMA908PZ

Place of Origin:Multi-origin

...MOSFET Power Electronics Parameters: • Voltages: 8V - 28V • Package: TO-220 • Maximum Continuous Drain Current: 8A • Maximum Power Dissipation: 16W • RDS(on): 0.19 ohm • Operating Temperature Range: -55°C to +150°C • Gate Threshold Voltage: 1.9V • Input Capacitance: 680pF • Output Capacitance: 200pF • Fall Time: 61ns • Rise Time: 52ns • Drain-Source Breakdown Voltage: 28V Product Status Active FET Type...

Brand Name:MEYI

Model Number:GPB

...h high-quality materials, this packaging is designed to enhance the appeal of your product while providing durability and protection. The closure type of this packaging is a convenient spray mechanism, allowing for easy application of the perfume. This feature...

Place of Origin:CN

Brand Name:Original Factory

Model Number:MSCSM170HRM451AG

Automotive IGBT Modules MSCSM170HRM451AG Mosfet Array T-Type SiC MOSFET Power Module [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date ...

Place of Origin:Original

Brand Name:Littelfuse Inc.

Model Number:NGD8205ANT4G

NGD8205ANT4G IGBT Power Module Transistors IGBTs Single NGD8205ANT4G Specifications Part Status Active IGBT Type - Voltage - Collector Emitter Breakdown (Max) 390V Current - Collector (Ic) (Max) 20A Current - Collector Pulsed (Icm) 50A Vce(on) (Max) @ Vge...

Brand Name:LEADSIGN

Model Number:FAKRA Connector Cable

Place of Origin:China

Product Description: FAKRA cables, essential in modern automotive technology, facilitate reliable signal transmission with a host of advantages. They ensure robust and interference-resistant connectivity, making them pivotal in the automotive industry's ...

Brand Name:Mitsubishi

Model Number:RA45H4045MR-101

Place of Origin:JP

... The RA45H4045MR is a 45-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to 450-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V...

Brand Name:Lingxun

Model Number:CS4N50A2

Place of Origin:China

4A 500V 2.1Ω N-Channel Enhancement Mode Power MOSFET For Standby Power N-Channel Enhancement Mode Power MOSFET Part No.:CS4N50A Package:TO-220F/TO-252/TO-251 MAIN CHARACTERISTICS ID:4A VDSS:500V RDSON-typ VGS=10V: 2.1Ω ...

Brand Name:Hua Xuan Yang

Model Number:12N60

Place of Origin:ShenZhen China

...Mosfet Transistor , Small Mosfet Power Switch Enhancement Mode N Channel Mosfet Transistor DESCRIPTION The UTC 12N60-C is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors. N Channel Mosfet

Brand Name:TOSHIBA

Model Number:TPC8111

Place of Origin:Taiwan

....) • High forward transfer admittance: |Yfs| = 23 S (typ.) • Low leakage current: IDSS = −10 µA (max) (VDS = −30 V) • Enhancement-mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID =

Brand Name:Infineon

Model Number:IPB200N25N3

Place of Origin:CHINA

... Threshold Yes Automotive No PPAP No Product Category Power MOSFET Configuration Single Process Technology OptiMOS 3 Channel Mode Enhancement Channel Type N Number of Elements per Chip 1 Maximum Drain Source Voltage (V) 250 Maximum Gate Source Voltage (V)

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

.... This type of MOSFET is a N type, which makes it suitable for a range of applications that require high voltage and/or ultra-high voltage power supply. High Voltage MOSFETs are designed for superior performance, with advanced thermal management and

Brand Name:JUYI

Model Number:JY4N8M

Place of Origin:China

JY4N8M N Channel Enhancement Mode Power surface mount MOSFET for BLDC motor driver GENERAL DESCRIPTION: The JY4N8M utilizes the latest trench processing techniques to achieve the high cell density and ...

Brand Name:To shi ba

Model Number:TK8A60DA(STA4,Q,M)

Place of Origin:Shenzhen, China

TK8A60DA Trans MOSFET N-CH 600V 7.5A 3-Pin(3+Tab) TO-220SIS - Rail/Tube Technical Attributes : Description Value Channel Mode Enhancement Channel Type N Maximum Continuous Drain Current 7.5 A Maximum Drain Source Voltage 600 V Maximum Gate Source Voltage...

Brand Name:Diodes

Model Number:DMN26D0UFB4-7

Place of Origin:UAS

DMN26D0UFB4-7 Diodes MOSFET ENHANCE MODE MOSFET 20V N-Chan X2-DFN1006 DMN26D0UFB4-7B Manufacturer: Diodes Incorporated Product Category: MOSFET Technology: Si Installation style: SMD/SMT Package/Box: X2-DFN1006-3 Transistor polarity: N-Channel Number of ...

Brand Name:Hua Xuan Yang

Model Number:G080NH03LA1C1

Place of Origin:ShenZhen China

...similar to the general MOSFET. The power MOSFETS are very special to handle the high level of powers. It shows the high switching speed and by comparing with the normal MOSFET, the power MOSFET will work better. The power MOSFETs is widely used in the n

Model Number:BUZ10

Place of Origin:Kuala Lumpur, Malaysia

Brand Name:Mot

BUZ10 Transistor N Channel MOSFET Trans MOSFET N-CH 50V 23A 3-Pin(3+Tab) TO-220 Category Power MOSFET Channel Mode Enhancement Channel Type N Configuration Single Material Si Maximum Continuous Drain Current 23A Maximum Drain Source Voltage 50V Maximum ...

Brand Name:DIODES

Model Number:ZXMP10A17E6TA

Place of Origin:Original

...ENHANCEMENT MODE MOSFET linear power mosfet trench power mosfet FEATURES • Low on-resistance • Fast switching speed • Low threshold • Low gate drive • SOT23-6 package APPLICATIONS • DC–DC Converters • Power Management functions • Disconnect switches • Motor control DESCRIPTION This new generation of Trench MOSFETs...

Brand Name:Vishay Semiconductor

Model Number:SIHF10N40D-E3

Place of Origin:CHINA

...mosfets N channel transistor operates in enhancement mode Vishay's SIHF10N40D-E3 maximum power dissipation is 33000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. If you need to either amplify or switch between signals in your design, then Vishay's SIHF10N40D-E3 power MOSFET...

Brand Name:APEC

Model Number:AP4953GM

Place of Origin:Original Factory

INTEGRATED CIRCUIT CHIP AP4953GM --P-CHANNEL ENHANCEMENT MODE POWER MOSFET Quick Detail: P-CHANNEL ENHANCEMENT MODE POWER MOSFET Specifications: part no. 　AP4953GM Manufacturer 　APEC supply ability 　3000 datecode 　2007+ package SOP　 remark new...

Place of Origin:MALAYSIA

Brand Name:Freescale

Model Number:MRF6S19140HSR3

MRF6S19140HSR3 is a N-Channel Enhancement-Mode Lateral MOSFETs . Part NO: MRF6S19140HSR3 Brand: Freescale Date Code: 06+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD specializes in High frequency microwave ...