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Categories | Technical Ceramic Parts |
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Brand Name: | ZG |
Model Number: | MS |
Certification: | CE |
Place of Origin: | CHINA |
MOQ: | 1 piece |
Price: | USD10/piece |
Payment Terms: | L/C, D/A, D/P, T/T, Western Union, MoneyGram |
Supply Ability: | 10000 pieces per month |
Delivery Time: | 3 working days |
Packaging Details: | Strong wooden box for Global shipping |
Application: | red , yellow , and green LED ( light-emitting diodes ) |
Diameter: | Ø 2" / Ø 3" |
Thickness: | 500 um ~ 625 um |
Grade: | Epi polished grade / mechanical grade |
Company Info. |
HENAN ZG INDUSTRIAL PRODUCTS CO.,LTD |
Verified Supplier |
View Contact Details |
Product List |
InP wafer ( Indium phosphide )
We provides high quality single crystal InP wafer ( Indium phosphide ) to micro-electronic ( HBT/ HEMT ) and opto-electronic industry ( LED / DWDM / PIN / VCSELs ) in diameter up to 3 inch . Indium phosphide ( InP ) crystal is formed by two elements , Indium and Phosphide , growth by Liquid Encapsulated Czochralski ( LEC ) method or VGF method . InP wafer is an important semiconductor material which have superior electrical and thermal properties , compared to silicon wafer and GaAs wafer , InP wafer has higher electron mobility ,higher frequency , low power consumption , higher thermal conductivity and low noise performance . We can provide epi ready grade InP wafer for your MOCVD & MBE epitaxial application .Please contact us for more product information .
III-V Compound Wafer
We provides a wide range of compound wafer including GaAs wafer, GaP wafer, GaSb wafer, InAs wafer, and InP wafer .
Electrical and Doping Specification
Product Specification
Growth | LEC / VGF |
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Diameter | Ø 2" / Ø 3" / Ø 4" |
Thickness | 350 um ~ 625 um |
Orientation | <100> / <111> / <110> or others |
Off orientation | Off 2° to 10° |
Surface | One side polished or two sides polished |
Flat options | EJ or SEMI. Std . |
TTV | <= 10 um |
Bow / Warp | <= 20 um |
Grade | Epi polished grade / mechanical grade |
Package | Single wafer container |
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