High Power NPN Bipolar Transistor 80 Volt 8 Amp Nexperia MJD44H11AJ DPAK Package Thermal Dissipation

Categories	Single Bipolar Transistors
Emitter-Base Voltage(Vebo):	6V
Current - Collector Cutoff:	1uA
Pd - Power Dissipation:	1.75W
Transition frequency(fT):	160MHz
type:	NPN
Current - Collector(Ic):	8A
Collector - Emitter Voltage VCEO:	80V
Operating Temperature:	-55℃~+150℃
Description:	Bipolar (BJT) Transistor NPN 80V 8A 160MHz 1.75W Surface Mount DPAK
Mfr. Part #:	MJD44H11AJ
Model Number:	MJD44H11AJ
Package:	DPAK

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High Power NPN Bipolar Transistor 80 Volt 8 Amp Nexperia MJD44H11AJ DPAK Package Thermal Dissipation

Nexperia MJD44H11A: 80 V, 8 A NPN High Power Bipolar Transistor

Product Overview

The Nexperia MJD44H11A is a high-power NPN bipolar transistor designed for demanding applications. Encased in a compact DPAK (TO-252 / SOT428C) surface-mount package, this transistor offers high thermal power dissipation capabilities and excellent energy efficiency due to reduced heat generation. It is electrically similar to the MJD44H series and is AEC-Q101 qualified, making it suitable for automotive applications. Key features include a low collector-emitter saturation voltage and fast switching speeds, making it ideal for power management, load switching, linear voltage regulation, constant current backlighting, motor drives, and relay replacement.

Product Attributes

Brand: Nexperia
Product Type: NPN High Power Bipolar Transistor
Package Type: DPAK (TO-252 / SOT428C)
Qualification: AEC-Q101 Qualified
PNP Complement: MJD45H11A

Technical Specifications

Symbol	Parameter	Conditions	Min	Typ	Max	Unit
VCEO	Collector-emitter voltage	-	-	-	80	V
IC	Collector current	-	-	-	8	A
ICM	Peak collector current	Single pulse; tp 1 ms	-	-	16	A
hFE	DC current gain	VCE = 1 V; IC = 2 A; Tamb = 25 C	60	-	-	-
Ptot	Total power dissipation	Tmb 25 C [1]	-	-	20	W
Ptot	Total power dissipation	Tamb 25 C [2]	-	-	1.75	W
Tj	Junction temperature	-	-	-	150	C
Tamb	Ambient temperature	-	-55	-	150	C
Tstg	Storage temperature	-	-65	-	150	C
Rth(j-mb)	Thermal resistance junction to mounting base	-	-	-	6.25	K/W
Rth(j-a)	Thermal resistance junction to ambient	[1]	-	-	72	K/W
ICES	Collector-emitter cut-off current	VCE = 64 V; VBE = 0 V; Tamb = 25 C	-	-	1	A
ICES	Collector-emitter cut-off current	VCE = 64 V; VBE = 0 V; Tj = 150 C	-	-	50	A
IEBO	Emitter-base cut-off current	VEB = 5 V; IC = 0 A; Tamb = 25 C	-	-	1	A
hFE	DC current gain	VCE = 1 V; IC = 4 A; Tamb = 25 C	40	-	-	-
VCEsat	Collector-emitter saturation voltage	IC = 8 A; IB = 400 mA; Tamb = 25 C	-	-	1	V
VBEsat	Base-emitter saturation voltage	IC = 8 A; IB = 800 mA; Tamb = 25 C	-	-	1.5	V
Cc	Collector capacitance	VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C	-	30	-	pF
fT	Transition frequency	VCE = 10 V; IC = 500 mA; f = 100 MHz; Tamb = 25 C	-	160	-	MHz

[1] Total power dissipation junction to mounting base.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated mounting pad for collector 1 cm.

2410121948_Nexperia-MJD44H11AJ_C3198528.pdf

High Power NPN Bipolar Transistor 80 Volt 8 Amp Nexperia MJD44H11AJ DPAK Package Thermal Dissipation

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