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bjt collector 100v

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TIP36C transistor PNP 100V 25A TO-247 TIP36 original transistors

China TIP36C transistor PNP 100V 25A TO-247 TIP36 original  transistors on sale
...BJT) - Single Manufacturer STMicroelectronics Featured Product Power Bipolar Transistors Packaging Tube Part Status Active Transistor Type PNP Current - Collector (Ic) (Max) 25A Voltage - Collector Emitter Breakdown (Max) 100V Vce Saturation (Max) @ Ib, Ic 4V @ 5A, 25A Current - Collector......
Shenzhen Quanyuantong Electronics Co., Ltd.

Address: Rm18 B, Block A, Duhui100 Zhonghang Road ,Futian District,Shenzhen China

JAN2N2222A Bipolar Transistors - BJT 50 V Small-Signal BJT RF Transistors

China JAN2N2222A Bipolar Transistors - BJT 50 V Small-Signal BJT RF Transistors on sale
...BJT 50 V Small-Signal BJT Manufacturer: Microchip Product Category: Bipolar Transistors - BJT RoHS: N Technology: Si Mounting Style: Through Hole Package / Case: TO-18-3 Transistor Polarity: NPN Configuration: Single Maximum DC Collector Current: 800 mA Collector- Emitter Voltage VCEO Max: 50 V Collector- Base Voltage VCBO: 75 V Emitter- Base Voltage VEBO: 6 V Collector......
Wisdtech Technology Co.,Limited

Address: Room 1205-1207, Nanguang building, Huafu Road, Futian District, Shenzhen, Guangdong, China

2SB1424 ROHM UTC ICS Simbol Transistor Bipolar BJT ROHS 2SB1424 PNP Low VCE

China 2SB1424 ROHM UTC ICS Simbol Transistor Bipolar BJT ROHS 2SB1424 PNP Low VCE on sale
...BJT ROHS 2SB1424 PNP Low VCE(sat) Transistor Product Paramenters Manufacturer: ROHM Semiconductor Product Category: Bipolar Transistors - BJT RoHS: Details Mounting Style: SMD/SMT Transistor Polarity: PNP Configuration: Single Collector- Emitter Voltage VCEO Max: 20 V Collector- Base Voltage VCBO: 30 V Emitter- Base Voltage VEBO: 6 V Collector-Emitter Saturation Voltage: 350 mV Maximum DC Collector...
ShenZhen QingFengYuan Technology Co.,Ltd.

Address: Room 2808-2809, Duhuixuan, No. 3018, Shennan Avenue, Huahang Community, Huaqiang North Street, Futian District, Shenzhen

NPN Bipolar Transistor IC Chip 100V 65W 6A TIP41C Single Transistor

China NPN Bipolar Transistor IC Chip 100V 65W 6A TIP41C Single Transistor on sale
... bipolar NPN 100V 65W 6A Bipolar transistor TIP41C Products Description: 1.TIP41C single transistor bipolar, NPN, 100 V, 65 W, 6 A, 75 hFE 2. TIP41C, NPN transistor, 6 A, Vce=100 V, HFE:15, 3-pin to-220 package 3.Trans GP BJT NPN 100V 6A 65000mW 3-Pin......
Shenzhen Res Electronics Limited

Address: B615, Niulanqian Building, Minzhi Avenue, Longhua District, Shenzhen City, Guangdong Province, China

MMBT3904-7-F Bipolar (BJT) Transistor NPN 40 V 200 MA 300MHz 300 MW SOT-23-3

China MMBT3904-7-F Bipolar (BJT) Transistor NPN 40 V 200 MA 300MHz 300 MW SOT-23-3 on sale
... Current - Collector (Ic) (Max) 200 mA Voltage - Collector Emitter Breakdown (Max) 40 V Vce Saturation (Max) @ Ib, Ic 300mV @ 5mA, 50mA Current - Collector Cutoff (Max) 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 100 @...
Shenzhen Xinyuanpeng Technology Co., Ltd.

Address: 4E, No. 3, Shenfeng Road, Liuyue Community, Henggang Street, Longgang District, Shenzhen, China

MMBT5551LT1G IGBT Power Module 600mA 160V BJT Bipolar Transistors

China MMBT5551LT1G IGBT Power Module 600mA 160V BJT Bipolar Transistors on sale
...BJT Bipolar Transistors MMBT5551LT1G SOT-23-3 Bipolar Transistors - BJT 600mA 160V NPN Manufacturer: onsemi Product Category: Bipolar Transistors - BJT RoHS: Details Mounting Style: SMD/SMT Package / Case: SOT-23-3 Transistor Polarity: NPN Configuration: Single Collector- Emitter Voltage VCEO Max: 160 V Collector- Base Voltage VCBO: 180 V Emitter- Base Voltage VEBO: 6 V Collector......
QIN XIN (HONG KONG) ELECTRONIC TECHNOLOGY CO.,LIMITED

Address: FLAT/RM D52 3/F WONG KING INDUSTRIAL BUILDING NO 2TAU=I YAU STREET

BCP53-16T1G Bipolar Transistors BJT Onsemi SOT-223-4 Cut Tape

China BCP53-16T1G Bipolar Transistors BJT Onsemi SOT-223-4 Cut Tape on sale
...BJT RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: SOT-223-4 Transistor Polarity: PNP Configuration: Single Maximum DC Collector Current: 1.5 A Collector- Emitter Voltage VCEO Max: 80 V Collector- Base Voltage VCBO: 100 V Emitter- Base Voltage VEBO: 5 V Collector......
HK NeoChip Technology Limited

Address: Futian District Huaqiang Subdistrict, Huaqiang Garden, Building A, Room 31C

MPS6560 Bipolar Transistors BJT Discrete Semiconductors 625mW

China MPS6560 Bipolar Transistors BJT Discrete Semiconductors 625mW on sale
...BJT Discrete Semiconductors original Product Attribute Attribute Value Product Category: Bipolar Transistors - BJT Transistor Polarity: NPN Configuration: Single Collector- Emitter Voltage VCEO Max: 25 V Collector- Base Voltage VCBO: 25 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector......
Walton Electronics Co., Ltd.

Address: 5C,Building D,GALAXY WORLD.Longhua District, Shenzhen.CN

New & Original Power Mosfet Transistor (−100V , −2A) 2SB1316

China New & Original Power Mosfet Transistor (−100V , −2A) 2SB1316 on sale
... the 2SD2195 / 2SD1980. External dimensions (Unit : mm) Absolute maximum ratings (Ta = 25°C) Parameter Symbol Limits Unit Collector-base voltage VCBO -100 V Collector-emitter voltage VCEO -100 V Emitter-base voltage VEBO -8 V Collector current IC -2 A...
Anterwell Technology Ltd.

Address: Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China

New & Original Power Mosfet Transistor (−100V , −2A) 2SB1316

China New & Original Power Mosfet Transistor (−100V , −2A) 2SB1316 on sale
...100V , −2A) 2SB1580 / 2SB1316 Features 1) DarliCM GROUPon connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SD2195 / 2SD1980. External dimensions (Unit : mm) Absolute maximum ratings (Ta = 25°C) Parameter Symbol Limits Unit Collector-base voltage VCBO -100 V Collector-emitter voltage VCEO -100 V Emitter-base voltage VEBO -8 V Collector......
ChongMing Group (HK) Int'l Co., Ltd

Address: Room 1204, DingCheng International Building, 518028 Futian District, SHENZHEN, CN

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