TIP36C transistor PNP 100V 25A TO-247 TIP36 original transistors
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...BJT) - Single Manufacturer STMicroelectronics Featured Product Power Bipolar Transistors Packaging Tube Part Status Active Transistor Type PNP Current - Collector (Ic) (Max) 25A Voltage - Collector Emitter Breakdown (Max) 100V Vce Saturation (Max) @ Ib, Ic 4V @ 5A, 25A Current - Collector......
Shenzhen Quanyuantong Electronics Co., Ltd.
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JAN2N2222A Bipolar Transistors - BJT 50 V Small-Signal BJT RF Transistors
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...BJT 50 V Small-Signal BJT Manufacturer: Microchip Product Category: Bipolar Transistors - BJT RoHS: N Technology: Si Mounting Style: Through Hole Package / Case: TO-18-3 Transistor Polarity: NPN Configuration: Single Maximum DC Collector Current: 800 mA Collector- Emitter Voltage VCEO Max: 50 V Collector- Base Voltage VCBO: 75 V Emitter- Base Voltage VEBO: 6 V Collector......
Wisdtech Technology Co.,Limited
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2SB1424 ROHM UTC ICS Simbol Transistor Bipolar BJT ROHS 2SB1424 PNP Low VCE
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...BJT ROHS 2SB1424 PNP Low VCE(sat) Transistor Product Paramenters Manufacturer: ROHM Semiconductor Product Category: Bipolar Transistors - BJT RoHS: Details Mounting Style: SMD/SMT Transistor Polarity: PNP Configuration: Single Collector- Emitter Voltage VCEO Max: 20 V Collector- Base Voltage VCBO: 30 V Emitter- Base Voltage VEBO: 6 V Collector-Emitter Saturation Voltage: 350 mV Maximum DC Collector...
ShenZhen QingFengYuan Technology Co.,Ltd.
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NPN Bipolar Transistor IC Chip 100V 65W 6A TIP41C Single Transistor
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... bipolar NPN 100V 65W 6A Bipolar transistor TIP41C Products Description: 1.TIP41C single transistor bipolar, NPN, 100 V, 65 W, 6 A, 75 hFE 2. TIP41C, NPN transistor, 6 A, Vce=100 V, HFE:15, 3-pin to-220 package 3.Trans GP BJT NPN 100V 6A 65000mW 3-Pin......
Shenzhen Res Electronics Limited
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MMBT3904-7-F Bipolar (BJT) Transistor NPN 40 V 200 MA 300MHz 300 MW SOT-23-3
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... Current - Collector (Ic) (Max) 200 mA Voltage - Collector Emitter Breakdown (Max) 40 V Vce Saturation (Max) @ Ib, Ic 300mV @ 5mA, 50mA Current - Collector Cutoff (Max) 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 100 @...
Shenzhen Xinyuanpeng Technology Co., Ltd.
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MMBT5551LT1G IGBT Power Module 600mA 160V BJT Bipolar Transistors
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...BJT Bipolar Transistors MMBT5551LT1G SOT-23-3 Bipolar Transistors - BJT 600mA 160V NPN Manufacturer: onsemi Product Category: Bipolar Transistors - BJT RoHS: Details Mounting Style: SMD/SMT Package / Case: SOT-23-3 Transistor Polarity: NPN Configuration: Single Collector- Emitter Voltage VCEO Max: 160 V Collector- Base Voltage VCBO: 180 V Emitter- Base Voltage VEBO: 6 V Collector......
QIN XIN (HONG KONG) ELECTRONIC TECHNOLOGY CO.,LIMITED
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BCP53-16T1G Bipolar Transistors BJT Onsemi SOT-223-4 Cut Tape
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...BJT RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: SOT-223-4 Transistor Polarity: PNP Configuration: Single Maximum DC Collector Current: 1.5 A Collector- Emitter Voltage VCEO Max: 80 V Collector- Base Voltage VCBO: 100 V Emitter- Base Voltage VEBO: 5 V Collector......
HK NeoChip Technology Limited
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MPS6560 Bipolar Transistors BJT Discrete Semiconductors 625mW
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...BJT Discrete Semiconductors original Product Attribute Attribute Value Product Category: Bipolar Transistors - BJT Transistor Polarity: NPN Configuration: Single Collector- Emitter Voltage VCEO Max: 25 V Collector- Base Voltage VCBO: 25 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector......
Walton Electronics Co., Ltd.
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New & Original Power Mosfet Transistor (−100V , −2A) 2SB1316
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... the 2SD2195 / 2SD1980. External dimensions (Unit : mm) Absolute maximum ratings (Ta = 25°C) Parameter Symbol Limits Unit Collector-base voltage VCBO -100 V Collector-emitter voltage VCEO -100 V Emitter-base voltage VEBO -8 V Collector current IC -2 A...
Anterwell Technology Ltd.
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New & Original Power Mosfet Transistor (−100V , −2A) 2SB1316
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...100V , −2A) 2SB1580 / 2SB1316 Features 1) DarliCM GROUPon connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SD2195 / 2SD1980. External dimensions (Unit : mm) Absolute maximum ratings (Ta = 25°C) Parameter Symbol Limits Unit Collector-base voltage VCBO -100 V Collector-emitter voltage VCEO -100 V Emitter-base voltage VEBO -8 V Collector......
ChongMing Group (HK) Int'l Co., Ltd
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