TO-220F Metal Oxide Semiconductor Field Effect Transistors 15A 600V 274mΩ
|
15A 600V 274mΩ TO-220F Metal-Oxide-Semiconductor Field-Effect Transistors N-channel Super Junction MOSFET Part No.:LC60R280F Package:TO-220F MAIN CHARACTERISTICS ID:15A VDSS:......
Guangdong Lingxun Microelectronics Co., Ltd
|
MR511 Gas Sensor Through The Adsorption Of Gas On The Surface Of Metal Oxide Semiconductor Caused By The Principle Of Thermal And Electrical Conduction Changes To Achieve Detection
|
...The Surface Of Metal Oxide Semiconductor Caused By The Principle Of Thermal And Electrical Conduction Changes To Achieve Detection Product description: MR511 gas sensor through the adsorption of gas on the surface of metal oxide semiconductor caused by ......
ShenzhenYijiajie Electronic Co., Ltd.
|
150W RF MOSFET Metal Oxide Semiconductor RFP-LD10M PXAC241702FC-V1-R250
|
PXAC241702FC-V1-R250 RF Metal Oxide Semiconductor Field Effect (RF MOSFET) Transistor RFP-LD10M Description ThePXAC241702FC is a 28 V LDMOS FET with an asym metrical design ......
Shenzhen Hongxinwei Technology Co., Ltd
|
Integrated Circuit Chip High-density Complementary Metal Oxide Semiconductor (HCMOS) Microcom MC68HC705B16N MOTOROLA PLC
|
MC68HC705B16N is a High-density Complementary Metal Oxide Semiconductor (HCMOS) Microcomputer Unit . Part NO: MC68HC705B16N Brand: MOTOROLA Mounting Type: Surface Mount Date Code: 03+ Quality Warranty: 3 Months Application: COMPUTER Over View The ......
Mega Source Elec.Limited
|
Metal Oxide Semiconductor Mosfet Power Transistor High Rugged Avalanche
|
Metal Oxide Semiconductor Mosfet Power Transistor High Rugged Avalanche Mosfet Power Transistor Description -30V/-60A R DS(ON) = 4.8mΩ(typ.) @V ......
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
|
PD57018-E RF Metal Oxide Semiconductor Field Effect (RF MOSFET) Transistors Black RF MOSFET Transistors
|
Product name:PD57018-E Manufacturer: STMicroelectronics Product Category: RF Metal Oxide Semiconductor Field Effect (RF MOSFET) Transistors Transistor Polarity: N-Channel Technology: Si Id-Continuous Drain Current: 2.5 A Vds-drain-source breakdown voltage......
Beijing Silk Road Enterprise Management Services Co.,LTD
|
ISO9001 Metal Oxide Semiconductor Fet Mosfet Transistor Multi Function
|
Low On Resistance High Power MOSFET Stable Process Reliable Quality *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: 100%;}body {line-height: 1.5;-webkit-font-smoothing: antialiased;}img, picture, video, canvas, svg {......
Reasunos Semiconductor Technology Co., Ltd.
|
Surge Arresters MOV Metal Oxide Varistor Zinc Oxide Varistor For Semiconductor D30×30
|
...metal oxide varistor for semiconductor D30×30 Metal oxide varistor MOV Blocks is a ceramic semiconductor element made of zinc oxide as the main material, its resistance value changes with the change of applied voltage, is the core component of metal oxide arrester, and its quality directly determines the performance of arrester. Our company's metal oxide......
XIAN XIWUER ELECTRONIC AND INFO. CO., LTD
|
Surge Arresters MOV Metal Oxide Varistor For Semiconductor Component , IEC60099-4
|
...Metal Oxide Varistor For Semiconductor Component , IEC60099-4 Quick Detail: 1.Good non-liner speciality 2.No redundant current 3.Large galvanization 4.Smart response 5.Low clamping voltage , good protection performance Description: Metal Oxide Varistor is a ceramic semiconductor component made of zinc oxide as the main material.Its resistance value varies with applied voltage and it is the core components of metal oxide...
Guangdong Uchi Electronics Co.,Ltd
|
Large Absorbing Nonlinear Big Size 275V RMS 32mm MYL Metal Oxide Varistor MOV 32D431K Voltage Dependent Resistor VDR
|
... as the main material of metal oxide semiconductor components,and they can be divided into symmetric (non-polarity) and asymmetric (with polarity) according to the voltage-ampere characteristic.The nonlinear resistors are more sensitive to voltage, when...
Aolittel Technology Co.,Ltd
|
Submit your “metal oxide semiconductor” inquiry in a minute :