MMBT3904-7-F multi emitter transistor NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
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MMBT3904 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • Epitaxial Planar Die Construction • Complementary PNP Type Available (MMBT3906) • Ideal for Medium Power Amplification and Switching • Lead Free/RoHS Compliant (Note 2) • Qualified to AEC-Q101 ......
Anterwell Technology Ltd.
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MMBT3904-7-F multi emitter transistor NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
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MMBT3904 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • Epitaxial Planar Die Construction • Complementary PNP Type Available (MMBT3906) • Ideal for Medium Power Amplification and Switching • Lead Free/RoHS Compliant (Note 2) • Qualified to AEC-Q101 ......
ChongMing Group (HK) Int'l Co., Ltd
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MJ11033G Aviation Parts Darlington Emitter Transistors 5V
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Aviation Parts MJ11033G Darlington Transistors Emitter- Base Voltage 5 V Descriptions of Aviation Parts: High−Current Complementary Silicon Power Transistors are for use as output devices in complementary general purpose amplifier applications. Features......
XIXIAN FORWARD TECHNOLOGY LTD
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Multi-emitter 808nm Diode Laser Module 15W Fiber Coupled Laser Module
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Features: wavelength 808nm output power 15W 375µm fiber bundle diameter 0.22N.A. Applications: Laser pumping Illumination Medical use Material processing Specifications(25℃) Symbol Unit K808F02MN-15.00W Minimum Typical Maximum Parameter CW-Output Power Po......
BWT Beijing Ltd.
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JAN2N2222A Bipolar Transistors - BJT 50 V Small-Signal BJT RF Transistors
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...Transistors - BJT 50 V Small-Signal BJT Manufacturer: Microchip Product Category: Bipolar Transistors - BJT RoHS: N Technology: Si Mounting Style: Through Hole Package / Case: TO-18-3 Transistor Polarity: NPN Configuration: Single Maximum DC Collector Current: 800 mA Collector- Emitter Voltage VCEO Max: 50 V Collector- Base Voltage VCBO: 75 V Emitter- Base Voltage VEBO: 6 V Collector-Emitter......
Wisdtech Technology Co.,Limited
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600V 60A 378W Solar Inverter IGBT Power Transistor FGH60N60SFDTU
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...IGBT Transistors Technology: Si Package / Case: TO-247AB-3 Configuration: Single Collector- Emitter Voltage VCEO Max: 600 V Collector-Emitter Saturation Voltage: 2.3 V Maximum Gate Emitter Voltage: - 20 V, + 20 V Continuous Collector Current at 25 C: 120 A...
Shenzhen Retechip Electronics Co., Ltd
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A94 Silicon Power Transistor Emitter Base Voltage -5V For Mobile Power Supply
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...Transistors A94 TRANSISTOR (NPN) FEATURE Low Collector-Emitter Saturation Voltage High Breakdown Voltage Marking :A94 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -400 V VCEO Collector-Emitter Voltage -400 V VEBO Emitter......
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
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a1941 c5198 Transistor a1941 c5198 Transistor c5198 Amplifier 2SC5198 PNP Transistor 2SA1941 2SC5198 10A 100W TO-3P Original New
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...- Base Voltage VEBO: - 5 V Collector-Emitter Saturation Voltage: 2 V Gain Bandwidth Product fT: 30 MHz Maximum Operating Temperature: + 150 C Continuous Collector Current: ......
Shenzhen Quanyuantong Electronics Co., Ltd.
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2SC2987 Silicon NPN Power Transistors , 120W 20A High Power Transistor
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...Transistors Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type 2SA1227 ·High power dissipation APPLICATIONS ·For audio frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE VCBO Collector-base voltage Open emitter 140V VCEO Collector-emitter......
DELI ELECTRONICS TECHNOLOGY CO.,LTD
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600mA Silicon Power Transistor NPN Power Transistor High Current
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...Transistors A42 TRANSISTOR (NPN) FEATURE Low Collector-Emitter Saturation Voltage High Breakdown Voltage Marking :D965A MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 310 V VCEO Collector-Emitter Voltage 305 V VEBO Emitter......
Beijing Silk Road Enterprise Management Services Co.,LTD
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