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Stable Low Power P Channel Mosfet

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stable low power p channel mosfet

from 97 Products

Stable 20V Low Power P Channel Mosfet , Practical Low Voltage High Current Transistor

China Stable 20V Low Power P Channel Mosfet , Practical Low Voltage High Current Transistor on sale
Product Description: Introducing Low Voltage MOSFET from SGT, a breakthrough FOM optimization which covers more applications. This low gate voltage mosfet offers low power loss and low threshold voltage that allows it to be used in various motor driver, 5G......
Reasunos Semiconductor Technology Co., Ltd.

Address: 405,4F, B2 Bldg, Tian'an Cyber Park, No.1 Huangjin Road,Nancheng District, Dongguan City, Guangdong Province

LT40P04AD TO-252 Package Low Power P Channel Mosfet For PWM Application

China LT40P04AD TO-252 Package Low Power P Channel Mosfet For PWM Application on sale
LT40P04AD Low Voltage MOSFET TO-252 Package P Channel For PWM Application Part Number Package Die Channel ID (A) VDSS (V) VGSS (V) VGS(th)(V) RDS(ON) 10V(mΩ) RDS(ON) 4.5V(mΩ) Qg (nC) Ciss (pF) Min. Min. Min. Max. TYP MAX TYP MAX Typ Typ LT40P04AD TO-252......
Guangdong Lingxun Microelectronics Co., Ltd

Address: No.7,XingRong Road,ShiJie Town,Dongguan City,Guangdong Province,China

NTMFS4C024NT1G Integrated Circuit Chip 2.8mOhm Low Power N Channel Mosfet

China NTMFS4C024NT1G Integrated Circuit Chip 2.8mOhm Low Power N Channel Mosfet on sale
Integrated Circuit Chip NTMFS4C024NT1G N-Channel Transistors 30V 5-DFN package Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, ......
ShenZhen Mingjiada Electronics Co.,Ltd.

Address: 1239 New Asia Guoli Building Zhenzhong Road.,Futian district Shenzhen China

FDMC86102L High-Performance Low-Voltage N-Channel MOSFET Power Electronics shielded Gate 100V 18A

China FDMC86102L High-Performance Low-Voltage N-Channel MOSFET Power Electronics shielded Gate 100V 18A on sale
FDMC86102L High-Performance Low-Voltage N-Channel MOSFET Power Electronics shielded Gate 100V 18A Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100 V Current - Continuous Drain (Id) @ 25°C 7A (Ta), 18A (......
Shenzhen Sai Collie Technology Co., Ltd.

Address: 1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen

CJ2310 S10 Plastic Encapsulate Dual Gate Mosfet , High Power N Channel Mosfet

China CJ2310 S10 Plastic Encapsulate Dual Gate Mosfet , High Power N Channel Mosfet on sale
...Channel MOSFET Plastic-Encapsulate MOSFETS DESCRIPTION The CJ2310 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltage as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. FEATURE  High power......
DELI ELECTRONICS TECHNOLOGY CO.,LTD

Address: RM 311 3/F LINZHAN FORTUNE BUILDING No.1 SHENHUA STREET SHENFENG ROAD LIUYUE LONGGANG AREA SHENZHEN,CHINA

IXFK27N80Q N Channel Mosfet Transistor 800V 27A 0.32 Rds Power MOSFETs HiPerFET

China IXFK27N80Q N Channel Mosfet Transistor 800V 27A 0.32 Rds Power MOSFETs HiPerFET on sale
...Channel Mosfet 800V 27A 0.32 Rds Power MOSFETs HiPerFET Description HiPerFETTM Power MOSFETs Q-CLASS Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Features • IXYS advanced low Qg process • Low gate charge and capacitances - easier to drive - faster switching • International standard packages z Low......
Shenzhen Retechip Electronics Co., Ltd

Address: Room L, 23rd Floor, Building B, Duhui 100, Zhonghang Rd, Futian District, Shenzhen City, Guangdong

OEM N Channel Mosfet Transistor , Small Mosfet Power Switch Enhancement Mode

China OEM N Channel Mosfet Transistor , Small Mosfet Power Switch Enhancement Mode on sale
...Channel Mosfet Transistor , Small Mosfet Power Switch Enhancement Mode N Channel Mosfet Transistor DESCRIPTION The UTC 12N60-C is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors. N Channel Mosfet...
Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Address: Room 2013,DingCheng International Building, ZhenHua Road, FuTian District, ShenZhen, GuangDong Province

Ultra Low On-Resistance HEXFET Power MOSFET P-Channel MOSFET SOT-23 Footprint Fast Switching IRLML6402TRPBF

China Ultra Low On-Resistance HEXFET Power MOSFET P-Channel MOSFET SOT-23 Footprint Fast Switching IRLML6402TRPBF on sale
...Power MOSFET T ♦Ultra Low On-Resistance ♦P-Channel MOSFET ♦SOT-23 Footprint ♦Low Profile (<1.1mm) ♦Available in Tape and Reel ♦Fast Switching These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs......
Anterwell Technology Ltd.

Address: Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China

N- Channel Mosfet Power Transistor 55V 110A 200W Through Hole TO-220AB IRF3205PBF

China N- Channel Mosfet Power Transistor 55V 110A 200W Through Hole TO-220AB IRF3205PBF on sale
...Channel MOSFET 55V 110A 200W Through Hole TO-220AB Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs......
Shenzhen Koben Electronics Co., Ltd.

Address: C12F, Huaqiang Plaza, Huaqiangbei Shenzhen,China 518031

Ultra Low On-Resistance HEXFET Power MOSFET P-Channel MOSFET SOT-23 Footprint Fast Switching IRLML6402TRPBF

China Ultra Low On-Resistance HEXFET Power MOSFET P-Channel MOSFET SOT-23 Footprint Fast Switching IRLML6402TRPBF on sale
...Power MOSFET T ♦Ultra Low On-Resistance ♦P-Channel MOSFET ♦SOT-23 Footprint ♦Low Profile (<1.1mm) ♦Available in Tape and Reel ♦Fast Switching These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs......
ChongMing Group (HK) Int'l Co., Ltd

Address: Room 1204, DingCheng International Building, 518028 Futian District, SHENZHEN, CN
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